The hole and the free electron concentrations in a pure silicon at room temperature are given by 1.4 \times 10^{16} {\m}^{-3} each under equilibrium. When it is doped with indium and the hole concentration is {\n}_{ {\h}}=4 \times 10^{22} {\m}^{-3}, the electron concentration is

Correct Answer is : 0.49×1010m−3

AP EAPCET 17th May 2023 Shift 2 Solved Paper

Section: Physics

Question : 118 of 160

Marks: +1, -0

The hole and the free electron concentrations in a pure silicon at room temperature are given by 1.4×1016m−3 each under equilibrium. When it is doped with indium and the hole concentration is nh=4×1022m−3, the electron concentration is

0.49×1010m−3
0.14×1010m−3
0.36×1010m−3
0.72×1010m−3

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