GATE Electronics and Communications (EC) 2014 Shift 1 Solved Paper

The doping concentrations on the p-side and n-side of a silicon diode are 1 × 10¹⁶ cm^-3 and 1 × 10¹⁷ cm^-3, respectively. The forward bias of 0.3 V is applied to the diode. At T = 300 K, the intrinsic carrier concentration of silicon n_i = 1.5 × 10¹⁰ and $\frac{\mathit{k}\mathit{T}}{\mathit{q}}=26\mathit{m}\mathit{V}$. The electron concentration at the edge of the depletion region p-side is