GATE Electronics and Communications (EC) 2016 Shift 1 Solved Paper

Consider a silicon p-n junction with a uniform acceptor doping concentration of 10¹⁷ cm⁻³ on the p side and a uniform donor doping concentration of 10¹⁶ cm−3 on the n-side. No external voltage is applied to the diode. Given: kT/_q = 26 mV, n_i =1.5 ×10¹⁰ cm⁻³, ε_Si = 12ε₀, ε₀ = 8.85 × 10⁻¹⁴ F/m, and q = 1.6 ×10⁻¹⁹ C. The charge per unit junction area (nC cm⁻²) in the depletion region on the p-side is ___________.