GATE Electronics and Communications (EC) 2016 Shift 1 Solved Paper
© examsiri.com
Question : 49 of 65
Marks:
+1,
-0
Consider a silicon sample at T = 300 K, with a uniform donor density 𝑁𝑑 = 5 × 1016
cm−3, illuminated uniformly such that the optical generation rate is 𝐺𝑜𝑝𝑡= 1.5 × 1020 cm−3𝑠−1 throughout the sample. The incident radiation is turned off at 𝑡 = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are 𝜏𝑝0= 0.1 μs and 𝜏𝑛0 = 0.5 μs.
The hole concentration at 𝑡 = 0 and the hole concentration at 𝑡 = 0.3 μs, respectively, are
cm−3, illuminated uniformly such that the optical generation rate is 𝐺𝑜𝑝𝑡= 1.5 × 1020 cm−3𝑠−1 throughout the sample. The incident radiation is turned off at 𝑡 = 0. Assume low-level injection to be valid and ignore surface effects. The carrier lifetimes are 𝜏𝑝0= 0.1 μs and 𝜏𝑛0 = 0.5 μs.
The hole concentration at 𝑡 = 0 and the hole concentration at 𝑡 = 0.3 μs, respectively, are
Go to Question: