GATE Electronics and Communications (EC) 2016 Shift 2 Solved Paper

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Question : 47 of 65
 
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Consider a region of silicon devoid of electrons and holes, with an ionized donor density of Nd+=1017cm−3. The electric field at x = 0 is 0V/cm  and the electric field at x = L is 50 kV/cm in the positivex-direction. Assume that the electric field is zero in the y and z directions at all points.

Given q=1.6×10−19 coulomb, Eo=8.85×10−14F∕cm,Er=11.7 for silicon, the value of L(innm)  is ________.
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