GATE Electronics and Communications (EC) 2017 Shift 2 Solved Paper

For a particular intensity of incident light on a silicon p-n junction solar cell, the photocurrent density (J_L) is 2.5 mA/cm² and the open-circuit voltage (V_oc) is 0.451 V. Consider thermal voltage (V_T) to be 25 mV. If the intensity of the incident light is increased by 20 times, assuming that the temperature remains unchanged, V_oc (in volts) will be ___________.
(Take the ideality factor, η = 2 for Silicon)