GATE Electronics and Communications (EC) 2018 Solved Paper
© examsiri.com
Question : 55 of 65
Marks:
+1,
-0
A junction is made between p- Si with doping density NA1 = 1015 cm-3 and p Si with doping density NA2 = 1017 cm-3.
Given: Boltzmann constant k = 1.38 × 10-23 J.K-1, electronic charge q = 1.6 × 10-19 C. Assume 100% acceptor ionization.
At room temperature (T = 300K), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be ________.
Given: Boltzmann constant k = 1.38 × 10-23 J.K-1, electronic charge q = 1.6 × 10-19 C. Assume 100% acceptor ionization.
At room temperature (T = 300K), the magnitude of the built-in potential (in volts, correct to two decimal places) across this junction will be ________.
- Your Answer:
Go to Question: