A silicon P-N junction is shown in the figure. The doping in the P region is 5 × 10 16 cm -3 and doping in the N region is 10 × 10 16 cm -3 . The parameters given are Built-in voltage (Φ bi ) = 0.8 V Electron charge (q) = 1.6 × 10 -19 C Vacuum permittivity (ε 0 ) = 8.85 × 10 -12 F / m Relative permittivity of silicon (ε Si ) = 12 The magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is _______ V.

GATE Electronics and Communications (EC) 2021 Solved Paper

Question : 52 of 65

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A silicon P-N junction is shown in the figure. The doping in the P region is 5 × 10¹⁶ cm^-3 and doping in the N region is 10 × 10¹⁶ cm^-3. The parameters given are
Built-in voltage (Φ_bi) = 0.8 V
Electron charge (q) = 1.6 × 10^-19 C
Vacuum permittivity (ε₀) = 8.85 × 10^-12 F / m
Relative permittivity of silicon (ε_Si) = 12

The magnitude of reverse bias voltage that would completely deplete one of the two regions (P or N) prior to the other (rounded off to one decimal place) is _______ V.

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