Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µ n ) and oxide capacitance per unit area (C OX ) is µ n C OX = 1 mA/V 2 . The threshold voltage of the transistor is 1 V. For a gate-to-source voltage V GS = [2 − sin (2t)] V and drain-to-source voltage V DS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is ________.

GATE Electronics and Communications (EC) 2022 Solved Paper

Question : 47 of 65

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Consider an ideal long channel nMOSFET (enhancement-mode) with gate length 10 µm and width 100 µm. The product of electron mobility (µ_n) and oxide capacitance per unit area (C_OX) is µ_n C_OX = 1 mA/V² . The threshold voltage of the transistor is 1 V. For a gate-to-source voltage V_GS = [2 − sin (2t)] V and drain-to-source voltage V_DS = 1 V (substrate connected to the source), the maximum value of the drain-to-source current is ________.

40 mA
20 mA
15 mA
5 mA

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