In n-type semi conductor pentavalent impurity is added. Each pentavalent impurity donate a free electron the addition of pentavalent impurity create large number of free electron in conduction band. At room temperature, the number of electron in conduction band is greater than the number of hole in valance band. Hence, the probability of occupation of energy levels by electron in conduction band is greater then the probability of occupation of hole in valance band. This probability of occupation of energy levels is represented in terms of fermi level. These fore the Fermi level in h type semi conductor lies close to the conduction band.
= Fermi level energy = Conduction band energy = Valance band energy