In p−n−p transistor the collector current is slightly less than emitter current because the emitter-base junction is forward biased, so the majority charge carries (holes) of emitter get replaced from the positive terminal and move towards base. As, base is lightly dopped, some of the holes combine with the majority charge carries electrons present in the base and most of the holes reach the collector, crossing the collector-base junction. So, current in the circuit is IE=IB+IC